Pressure study of the external quantum efficiency of N-doped GaAs1−xPx light-emitting diodes
- 1 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9), 615-617
- https://doi.org/10.1063/1.89163
Abstract
The change in electroluminescence intensity as a function of hydrostatic pressure is measured for N‐doped GaAs1−xPx diodes in the composition regions x∼0.48 and ∼0.65. A large decrease with pressure is observed for the short‐range N transition (x∼0.48) reflecting the effect of the nearby Γ conduction band edge. The longer‐range NX transition (x∼0.65) is observed to be much less sensitive to pressure, which agrees with the expected smaller effect of Γ on NX at this composition. Based on N and NX oscillator strengths provided by a recent theoretical model for GaAs1−xPx : N, calculations of the relative change in external quantum efficiency are found to fit the data well.Keywords
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