Growth conditions and characterization of InGaAs/GaAs strained layers superlattices
- 15 April 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8), 2904-2909
- https://doi.org/10.1063/1.333331
Abstract
InGaAs/GaAs strained layers superlattices have been grown by molecular beam epitaxy on GaAs. The best growth temperature was found to be 520–540 °C from photoluminescence measurements. Double x-ray diffraction was performed. It shows very good agreement with the kinematical theory. This technique proves to be of particular interest for such structures: a single profile leads to reliable and complete information on layer thickness and InGaAs composition.Keywords
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