Growth and Properties of PbTiO3 Thin Films by Photoenhanced Chemical Vapor Deposition
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9S)
- https://doi.org/10.1143/jjap.30.2189
Abstract
The photoenhanced chemical vapor deposition (CVD) of PbTiO3 thin films was carried out using tetraethyl lead, titanium tetraisopropoxide and nitrogen dioxide. The use of NO2 and UV light irradiation during the growth run affected the crystalline quality and dielectric properties of films. The photodeposited films with a perovskite structure were obtained on sapphire at substrate temperatures above 530°C. In this study, it was found that the photodissociation of NO2 played an important role in decreasing the growth temperature. The step coverage characteristics of films were also investigated.Keywords
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