Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?
- 7 September 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (10), 1213-1215
- https://doi.org/10.1063/1.107598
Abstract
We present results of photoluminescence experiments performed at 2 and 300 K on porous silicon layers with different porosities. The samples are obtained by electrochemical dissolution of (100) silicon wafers in hydrofluoric solution. The energy of the photoluminescence and its variation with porosity are found in good agreement with a theoretical model of quantum confinement in Si quantum wires. Electrons have to be taken into account, but it is shown that this quantum effect is mainly due (≊60%) to the large confinement of holes.Keywords
This publication has 12 references indexed in Scilit:
- Photoluminescence studies on porous siliconApplied Physics Letters, 1992
- Anomalous temperature dependencies of photoluminescence for visible-light-emitting porous SiApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Correlation of Raman and photoluminescence spectra of porous siliconApplied Physics Letters, 1992
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porous silicon: The material and its applications to SOI technologiesMicroelectronic Engineering, 1988