Modeling ferroelectric capacitor switching using a parallel-elements model
- 1 April 1997
- journal article
- memory devices-and-charecterization
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 16 (1-4), 199-208
- https://doi.org/10.1080/10584589708013042
Abstract
The charge-voltage (Q-V) relationship of ferroelectric capacitors experiencing arbitrary applied voltages is investigated both theoretically and experimentally. The complex behavior and history dependence of a ferroelectric capacitor in response to arbitrary voltage patterns can be well described by a parallel-elements model. This approach not only describes all of the major properties of ferroelectric hysteresis but is also very easy to implement into existing circuit design/simulation tools.Keywords
This publication has 3 references indexed in Scilit:
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- A circuit model for a thin film ferroelectric memory deviceFerroelectrics, 1991