Inversion of n‐Type GaAs Surfaces Using a Silicon‐Silicon Dioxide Insulator Structure

Abstract

A novel gating structure for using a thin pseudomorphic Si interlayer to isolate the dielectric film from the surface has been fabricated and tested. The structural and chemical nature of the Si interlayer has been characterized using reflecting high energy electron diffraction, ion scattering spectroscopy, and x‐ray photoelectron spectroscopy. The Si layer appears to be single crystalline conforming to the lattice. The surface is completely covered by deposition of approximately 10Å of Si and this Si layer precludes the formation of any native oxides. High frequency and quasi‐static C‐V data indicate that the surface of the is swept from inversion to accumulation. Calculation of the surface potential variation from the quasi‐static data indicates that the surface potential is varied by 0.83V with an electric field variation of −1.6 to 3.2 MV‐cm⁻¹. This structure exhibits deep depletion characteristics with storage times on the order of minutes.