Abstract
Samples of heavily nitrogen-doped silicon carbide (SiC: N) have been studied by use of pulse nuclear magnetic resonance (NMR) at a resonance frequency of 8.5 MHz. Measurements were made, for Si29 and C13, of the Knight shift, the spin-lattice relaxation time T1, and the free-induction decay time T2* (which is inversely proportional to the linewidth). The samples of SiC: N studied had nitrogen donor concentrations nd estimated to be in the range 1.9×1019nd6.0×1020 cm3. Samples for which nd<1020 were of the 6H polytype, and samples for which nd>1020 were of the cubic polytype. The measurements on the cubic SiC: N samples show a markedly different behavior of the electron interaction with the silicon and carbon sublattices. The T1's of Si29 are an order of magnitude larger than those of C13 for these samples. In no case is the Si29 Knight shift observable, whereas the C13 Knight shift increases with nd, and is 0.9±0.1 G (in 7.92 kG) for the most heavily doped sample; the measured C13 Knight shifts agree with the C13 Knight shifts predicted from T1, using the Korringa relation. The C13 linewidth increases with nd, suggesting that the linewidth is determined by a distribution of Knight shifts. From the temperature dependence of both the Si29 and C13 T1's, it is inferred that the electron system is degenerate in the cubic SiC: N samples. The results can be explained in terms of the electron wave functions appropriate to the conduction-band minimum in cubic SiC. Thus it is inferred that the electron degeneracy in these samples is associated with the Fermi energy lying in the conduction band of the host SiC. The NMR properties of the 6H SiC: N samples are dominated by nuclear interaction with paramagnetic electrons...