Residual stress in silicon nitride films
- 1 June 1976
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 5 (3), 287-298
- https://doi.org/10.1007/bf02663273
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The Effects of Trace Amounts of Water on the Thermal Oxidation of Silicon in OxygenJournal of the Electrochemical Society, 1974
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- Stress and resistivity control in sputtered molybdenum films and comparison with sputtered goldMetallurgical Transactions, 1971
- Thermal Expansion of Sputtered Silicon Nitride FilmsJournal of the Electrochemical Society, 1969
- Some Properties of Vapor Deposited Silicon Nitride Films Obtained by the Reaction of SiBr[sub 4] and NH[sub 3]Journal of the Electrochemical Society, 1969
- Property Changes in Pyrolytic Silicon Nitride with Reactant Composition ChangesJournal of the Electrochemical Society, 1968
- Some Properties of Vapor Deposited Silicon Nitride Films Using the SiH[sub 4]-NH[sub 3]-H[sub 2] SystemJournal of the Electrochemical Society, 1967
- Determination of Stress in Films on Single Crystalline Silicon SubstratesReview of Scientific Instruments, 1965
- Velocities and Densities of Dislocations in Germanium and Other Semiconductor CrystalsJournal of Applied Physics, 1962
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955