Growth of Crystalline Silicon Films on Polycrystalline Substrate
- 1 October 1967
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 6 (10), 1170-1175
- https://doi.org/10.1143/jjap.6.1170
Abstract
Crystalline films of silicon were prepared on a tungsten substrate by vacuum evaporation. The method used here was evaporation of silicon on a tungsten substrate, on which thin gold film was predeposited, keeping the substrate at 600–800°C. Growth of plane crystals or whisker crystals was observed depending on growth conditions such as substrate temperature, thickness of gold film and evaporation rate. The sizes of grown plane crystals were as large as several hundreds microns. Their orientation is (111) plane parallel to the substrate and their conductivity is n-type. The details of the growing technique and the examination of grown films will be explained and growth mechanism will be discussed.Keywords
This publication has 8 references indexed in Scilit:
- Silicon whisker growth by the vapour-liquid-solid processPhilosophical Magazine, 1966
- Progress toward Single Crystal Silicon Films on Amorphous SubstratesJournal of the Electrochemical Society, 1965
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964
- Growth of epitaxial silicon layers by vacuum evaporationPhilosophical Magazine, 1964
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- Grown-film silicon transistors on sapphireProceedings of the IEEE, 1964
- Crystal Growth of GaAs from Ga by a Traveling Solvent MethodJournal of Applied Physics, 1963
- Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporationVacuum, 1963