Effect of magnetic field in rf sputtering on the crystal orientation and magnetic properties of Co-Cr perpendicular anisotropy films
- 1 May 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5), 2429-2433
- https://doi.org/10.1063/1.332358
Abstract
Co–23‐wt. %‐Cr alloy films with thicknesses of 0.3 to 2.5 μm were deposited using a conventional rf diode sputtering system when a magnetic field Hs less than 90 Oe is applied during deposition. As Hs increases, the hcp c‐axis orientation normal to the film plane develops and the half‐angle width of the rocking curve of the (002) line Δθ50 reaches to 3.5 deg at Hs more than 40 Oe. The development of the orientation is strongly related to the concentration of O in the films, which is lower in the films deposited in a magnetic field than those in a nonmagnetic field. The magnetic properties such as perpendicular coercive force Hc⊥ and saturation magnetization Ms strongly depend on the substrate temperature rather than Hs.Keywords
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