Carrier lifetimes in epitaxial InAs
- 15 February 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (4), 184-185
- https://doi.org/10.1063/1.1655145
Abstract
A comparison has been made of the minority‐carrier lifetime (77–300 K) in relatively pure InAs prepared by liquid phase epitaxy, vapor phase epitaxy, and from the melt. The data suggest that the lifetime is controlled by Auger recombination in the material prepared by liquid phase epitaxy. This is not the case for the other materials.This publication has 3 references indexed in Scilit:
- Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxyJournal of Applied Physics, 1973
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- Carrier recombination in indium arsenideProceedings of the Physical Society, 1967