Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers
- 1 July 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (7), 753-755
- https://doi.org/10.1109/68.229795
Abstract
A study of the effects of biaxial strain on the performance of low-threshold 1.3- mu m In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm/sup 2/ for a two-quantum-well device with 0.85% compressive strain were obtained.Keywords
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