High pressure structural phase transformation in gallium nitride
- 1 January 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 81 (1), 23-26
- https://doi.org/10.1016/0038-1098(92)90563-o
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Ab initiocalculation of pressure coefficients of band gaps of silicon: Comparison of the local-density approximation and quasiparticle resultsPhysical Review B, 1989
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering B, 1988
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- Variation of lattice parameters in GaN with stoichiometry and dopingPhysical Review B, 1979
- Crystal structure refinement of AlN and GaNSolid State Communications, 1977
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974
- Cubic phase gallium nitride by chemical vapour depositionPhysica Status Solidi (a), 1974
- Pressure and Temperature Dependence of the Absorption Edge in GaNJournal of Applied Physics, 1971