The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
- 31 January 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (1), 47-50
- https://doi.org/10.1016/0038-1101(76)90132-5
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The physics of Schottky barriersJournal of Physics D: Applied Physics, 1970
- Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963