Strong electron-phonon coupling in defect luminescence in P-dopeda-Si:H
- 15 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (12), 8522-8524
- https://doi.org/10.1103/physrevb.33.8522
Abstract
We report the first direct evidence for a strong electron-phonon coupling associated with defect luminescence in hydrogenated amorphous silicon (a-Si:H). The low-energy luminescence transition induced by below-band-gap excitations (hν=1.17 eV and hν=0.94 eV) as well as its temperature dependence indicates that the low-energy photoluminescence band originates from the deexcitation of an electron from the conduction-band edge to the defect states via a strong electron-phonon coupling with a Franck-Condon shift of around 0.2 eV.Keywords
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