Nucleation and Growth of Germanium Nanowires Seeded by Organic Monolayer-Coated Gold Nanocrystals

Abstract

Germanium nanowires, ranging from 10 to 150 nm in diameter, were grown several micrometers in length in cyclohexane heated and pressurized above its critical point. Alkanethiol-protected gold nanocrystals, either 2.5 or 6.5 nm in diameter, were used to seed wire formation. Growth proceeded through a solution−liquid−solid mechanism at growth temperatures ranging from 300 to 450 °C. At temperatures exceeding 500 °C, large Ge particulates formed due to unfavorable growth kinetics. Temperature, the nature of the precursor, precursor concentration, and the Au:Ge ratio were determining factors in nanowire morphology. The Ge nanowires were characterized using a range of techniques, including XPS, XRD, high-resolution TEM and SEM, nanometer-scale EDS mapping, and DTA.