The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy
- 1 December 1997
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 50 (1-3), 72-75
- https://doi.org/10.1016/s0921-5107(97)00170-0
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- LibraryMRS Bulletin, 1997
- Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxyMaterials Science and Engineering B, 1997
- Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBEMRS Internet Journal of Nitride Semiconductor Research, 1997
- Structural defects due to interface steps and polytypism in III-V semiconducting materials: A case study using high-resolution electron microscopy of the 2H-AlN/6H-SiC interfacePhilosophical Magazine A, 1997
- Growth defects in GaN films on sapphire: The probable origin of threading dislocationsJournal of Materials Research, 1996
- Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiCMRS Internet Journal of Nitride Semiconductor Research, 1996
- Structure of the 2H-Ain/6H-SiC InterfaceMRS Proceedings, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- EMS - a software package for electron diffraction analysis and HREM image simulation in materials scienceUltramicroscopy, 1987