X-ray photoelectron diffraction study of Ge (111) 7×7-Sn surface; A new model for Si (111) 7×7 surface
- 31 January 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 49 (3), 253-257
- https://doi.org/10.1016/0038-1098(84)90904-9
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 15 references indexed in Scilit:
- Structure Analysis of the Si(111)7 × 7 Surface by Low-Energy Ion ScatteringPhysical Review Letters, 1983
- Temperature dependence of surface electronic structure of Si(111) surfaceSolid State Communications, 1983
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- Semiconductor surfacesAdvances in Physics, 1982
- Angle-resolved x-ray photoemission and Auger emission from core levels ofS and Se on Ni(001): Diffraction effects and single-scattering theoryPhysical Review B, 1981
- Similarity of the laser- and thermally annealed Si(111) surfacesPhysical Review B, 1981
- Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bondingPhysical Review B, 1981
- Atomic Displacements in the Si(111)-(7×7) SurfacePhysical Review Letters, 1980
- Chemisorption geometry ofoxygen on Cu (001) from angle-resolved core-level x-ray photoemissionPhysical Review B, 1980
- Theoretical electron scattering amplitudes and spin polarizations: Electron energies 100 to 1500 eV Part III. Li, Na, Mg, P, K, Ca, Sc, Mn, Ga, Br, Sr, Mo, Rh, Cd, Ba, W, and Os targetsAtomic Data and Nuclear Data Tables, 1974