Influence of tunnelling through barriers on grain boundaries on hole mobility in polycrystalline tellurium films
- 16 March 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 40 (1), 225-233
- https://doi.org/10.1002/pssa.2210400130
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Temperature dependence of hole mobilities in Te thin filmsPhysica Status Solidi (a), 1976
- Transport properties of tellurium thin films and their dependence on thicknessPhysica Status Solidi (a), 1976
- Growth of vacuum-deposited tellurium films on glass substrates and some of their transport propertiesPhysica Status Solidi (a), 1976
- Mobility studies of evaporated tellurium filmsThin Solid Films, 1976
- Hall Mobility of Evaporated Tellurium FilmsJapanese Journal of Applied Physics, 1973
- The electrical properties of vacuum deposited tellurium filmsThin Solid Films, 1973
- Theory of Photoconductivity in Semiconductor FilmsPhysical Review B, 1956