Improved Schottky barrier on n-InP by surface modification
- 31 August 1984
- journal article
- Published by Elsevier in Materials Letters
- Vol. 2 (5), 455-457
- https://doi.org/10.1016/0167-577x(84)90162-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of Surface Modification on Subbandgap Response of n ‐ InP PhotoelectrodesJournal of the Electrochemical Society, 1984
- InP Schottky contacts with increased barrier heightSolid-State Electronics, 1982
- Characteristics of MOS solar cells built on (n-type) InP substratesIEEE Transactions on Electron Devices, 1980
- Effects of Cations on the Performance of the Photoanode in the n ‐ GaAs | K 2Se ‐ K 2Se2 ‐ KOH | C Semiconductor Liquid Junction Solar CellJournal of the Electrochemical Society, 1979
- Technology of GaAs metal—Oxide—Semiconductor solar cellsIEEE Transactions on Electron Devices, 1977