Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
- 1 September 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (5), 492-494
- https://doi.org/10.1063/1.94363
Abstract
High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be+ and N+ implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.Keywords
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