Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into Si
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10), 1081-1083
- https://doi.org/10.1063/1.95022
Abstract
The dependence of the implantation-induced morphology on substrate heating during high dose O+ irradiation of Si was investigated. For high dose oxygen implantation, a continuous buried oxide layer forms during implantation. It is shown that the damage morphology in the crystalline region ahead of the buried oxide is extremely sensitive to variations in the temperature of the substrate about 475 °C. Both backscattering/channeling spectroscopy and transmission electron microscopy were used in determining the microstructure of the implanted samples.Keywords
This publication has 8 references indexed in Scilit:
- Characterization of buried SiO2 layers formed by ion implantation of oxygenJournal of Electronic Materials, 1984
- Formation of buried insulating layers in silicon by the implantation of high doses of oxygenNuclear Instruments and Methods in Physics Research, 1983
- Thermal annealing behavior of an oxide layer under siliconApplied Physics Letters, 1982
- The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion ImplantationMRS Proceedings, 1981
- Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2 Layers by Very High Dose Oxygen-Ion ImplantationJapanese Journal of Applied Physics, 1980
- C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- The dynamic observation of the formation of defects in silicon under electron and proton irradiationPhilosophical Magazine, 1973
- Enhanced diffusion in Si and Ge by light ion implantationJournal of Applied Physics, 1972