Spectral blue shift of photoluminescence in strained-layer Si1−xGex/Si quantum well structures grown by gas-source Si molecular beam epitaxy
- 17 August 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (7), 804-806
- https://doi.org/10.1063/1.107770
Abstract
Spectral blue shift of excitonic transition due to quantum confinement in Si0.84Ge0.16/Si strained‐layer quantum wells, grown by gas‐source Si molecular beam epitaxy, is reported. Intense photoluminescence was observed at elevated temperatures though reduced in intensity due to the thermalization of holes to the Si barriers.Keywords
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