Selective Deposition of Thin Copper Films onto Silicon with Improved Adhesion
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 4 (1), C5-C7
- https://doi.org/10.1149/1.1344280
Abstract
A novel copper deposition method has been developed to plate silicon surfaces. Continuous copper films are obtained galvanically on p- or n-type, single- or polycrystalline silicon. The films possess homogeneous structure, smooth surface, and improved adhesion to the substrate. The plating bath comprises an aqueous solution containing a copper compound, ascorbic acid, ammonium fluoride, and an antistress agent. With this process, the use of seed layers to improve adhesion between metal and semiconductor is avoided. © 2000 The Electrochemical Society. All rights reserved.Keywords
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