Hydrogen annealing effect on silicon-insulator(s) interface states

Abstract

Interface states density for silicon dioxide-silicon, silicon nitride-silicon, and silicon nitride-silicon dioxide-silicon structures under hydrogen ambient at 500°C has been investigated. A relative measure of the interface states indicates that nascent hydrogen is an effective ambient for reducing the interface states for Si-SiO₂. However, the presence of nitride layer over the oxide indicated a retardation in such a reduction.