Strong electron correlation effects in nonvolatile electronic memory devices
Open Access
- 16 January 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (3), 033510
- https://doi.org/10.1063/1.2164917
Abstract
We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device.Keywords
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