Fabrication of 15 μm thick Si-hole masks for demagnifying projection systems for ion- or electron-beams
- 31 December 1987
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 6 (1-4), 547-552
- https://doi.org/10.1016/0167-9317(87)90086-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Periodic Si-hole-masks in the μm and sub-μm range for electron-multibeamwritingMicroelectronic Engineering, 1986
- Secondary effects of single crystalline silicon deep- trench etching in a chlorine-containing plasma for 3- dimensional capacitor cellsMicroelectronic Engineering, 1986
- Electron-Beam Proximity Printing—A New High-Speed Lithography Method for Submicron StructuresIBM Journal of Research and Development, 1982