Photoluminescence in PbTe-PbEuTeSe multiquantum wells
- 15 June 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (12), 1173-1175
- https://doi.org/10.1063/1.95922
Abstract
Infrared photoluminescence has been studied in a thin (92 Å) PbTe-PbEuTeSe multiquantum well structure. The spectra show good agreement with calculations for the n=1 quantum well transition for a simple two-dimensional electron-hole gas with low-energy broadening consistent with monolayer well width fluctuations. From the measured effective electron temperatures we estimate that the electron-longitudinal optical phonon interaction is significantly reduced in comparison with bulk PbTe.Keywords
This publication has 7 references indexed in Scilit:
- Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs HeterostructuresPhysical Review Letters, 1984
- Single quantum well lead-europium-selenide-telluride diode lasersApplied Physics Letters, 1984
- Wavelength coverage of lead-europium-selenide-telluride diode lasersApplied Physics Letters, 1984
- Lead-europium-selenide-telluride grown by molecular beam epitaxyJournal of Electronic Materials, 1984
- Growth of lead-germanium-telluride thin film structures by molecular beam epitaxyJournal of Vacuum Science and Technology, 1982
- Recent advances in lead-chalcogenide diode lasersApplied Physics A, 1979
- Hot electrons and phonons under high intensity photoexcitation of semiconductorsSolid-State Electronics, 1978