The electrochemical characterization of n-type gallium arsenide
- 1 February 1973
- journal article
- Published by Springer Nature in Journal of Applied Electrochemistry
- Vol. 3 (1), 1-15
- https://doi.org/10.1007/bf01119461
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence MeasurementsJournal of Applied Physics, 1969
- Electrochemistry of SemiconductorsPublished by Springer Nature ,1967
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- The Chemical Polishing of Gallium Arsenide in Bromine-MethanolJournal of the Electrochemical Society, 1963
- Depletion-Layer Photoeffects in SemiconductorsPhysical Review B, 1959