A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1−xSbx alloys

Abstract

InAs/InAs_0.865Sb_0.135 quantum wells are characterized using magneto‐photoluminescence. Band‐ to‐band transitions are found at energies lower than the band gaps of either the InAs or the InAs_0.865Sb_0.135 with photoluminescence emission at wavelengths up to 4.8 μm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs.