Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhalten
- 31 January 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (1), 35-63
- https://doi.org/10.1016/0038-1101(75)90070-2
Abstract
No abstract availableKeywords
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