Mechanisms for oxygen adsorption on the Si(110) surface studied by Auger electron spectroscopy
- 2 November 1981
- journal article
- Published by Elsevier in Surface Science
- Vol. 111 (3), 545-554
- https://doi.org/10.1016/0039-6028(81)90407-6
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- The lineshape of the L2,3 VV Auger spectrum of siliconSurface Science, 1980
- Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfacesSurface Science, 1980
- Oxygen on cleaved silicon (111): Effects of atomic steps and residual gasesSurface Science, 1980
- Calculated and measured Auger line shapes in SiPhysical Review B, 1979
- Phase transitions on clean Si(110) surfacesSurface Science, 1977
- Chemisorption of atomic hydrogen on the silicon (110) 5 x 1 surface (UPS and LEED)Physics Letters A, 1976
- Elucidation of surface structure and bonding by photoelectron spectroscopy?Surface Science, 1975
- Contaminants on chemically etched silicon surfaces: LEED-Auger methodSurface Science, 1970
- Electron-beam assisted adsorption on the Si(111) surfaceSurface Science, 1970
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965