An investigation of the optical constants and band gap of chromium disilicide
- 1 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (3), 839-844
- https://doi.org/10.1063/1.340078
Abstract
Polycrystalline thin films of chromium disilicide were grown on silicon substrates. An analysis of the absorption coefficient data indicates that CrSi2 is a semiconductor with an indirect forbidden energy gap of slightly less than 0.35 eV. Measurements of the activation energy of the intrinsic conductivity confirm this result.Keywords
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