On indentation dislocation rosettes in silicon

Abstract

The structure of dislocation rosettes generated by microindentation in 〈100〉 silicon is discussed and then verified experimentally. Dislocation loops in the rosettes move on glide prisms that are formed by two {111} planes and the surface plane, the width of the prism being equal to the size of the indent. The size of the dislocation rosette is also discussed using a rudimentary model.