Comments on the plasma annealing model to explain the dynamics of pulsed laser annealing of ion-implanted silicon
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 1261
- https://doi.org/10.1063/1.330545
Abstract
Experimental problems are discussed associated with optical transmission and Raman spectroscopy measurements during pulsed laser annealing of silicon. In view of these problems, the use of these experiments in support of a plasma annealing model is questioned.Keywords
This publication has 6 references indexed in Scilit:
- Measurement of Lattice Temperature of Silicon during Pulsed Laser AnnealingPhysical Review Letters, 1981
- Theoretical and experimental investigation of the dynamics of pulsed laser annealing of amorphous siliconJournal of Applied Physics, 1981
- Time-resolved optical transmission of pulsed laser-irradiated siliconApplied Physics Letters, 1981
- Spontaneous phonon decay selection rule:andprocessesPhysical Review B, 1981
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979