Channeling of boron ions into silicon

Abstract

Channeled and random distributions of boron ions implanted over the energy range 50 keV–1.8 MeV into silicon have been measured using the differential capacitance technique. When implantations are performed along the 〈110〉 or 〈111〉 axis, profiles exhibit a strong orientation dependance. The best channeled profiles shows that more than 70% of the implanted dose is in the channeled peak.