Far-infrared picosecond time-resolved measurement of the free-induction decay in GaAs:Si
- 15 April 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (15), 9643-9647
- https://doi.org/10.1103/physrevb.51.9643
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- THz radiation from coherent population changes in quantum wellsPhysical Review B, 1994
- Coherent control of terahertz charge oscillations in a coupled quantum well using phase-locked optical pulsesPhysical Review B, 1993
- Agility of FELIX regarding wavelength and micropulse shapeNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993
- Ionization Energies and Lifetime Broadening of Autoionizing States of the Hydrogen Atom in Strong Magnetic Fields: Theory vs. ExperimentEurophysics Letters, 1990
- Identification and ionization energies of the shallow donor metastable states in GaAs:SiJournal of Applied Physics, 1990
- Impurity and Landau-level electron lifetimes inn-type GaAsPhysical Review B, 1985
- Far-infrared studies of central-cell structure of shallow donors in GaAs and InPJournal of Physics C: Solid State Physics, 1984
- Autoionizing states of the hydrogen atom in strong magnetic fieldsPhysical Review A, 1983
- Nonlinear Far-Infrared Magnetoabsorption and Optically Detected Magnetoimpurity Effect in-GaAsPhysical Review Letters, 1983