Submillimeter Absorption Spectra and Phase Transition of Indirect Excitons in Germanium
- 1 December 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 22 (12), 1086-1089
- https://doi.org/10.1109/tmtt.1974.1128435
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- High Purity Germanium for Detector FabricationIEEE Transactions on Nuclear Science, 1971
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- An Optical Determination of the Ground-State Splittings of Group V Impurities in GermaniumPhysical Review B, 1964
- Cyclotron resonance measurements of the energy band parameters of germaniumJournal of Physics and Chemistry of Solids, 1961
- Exciton energy levels in germanium and siliconJournal of Physics and Chemistry of Solids, 1960
- Exciton and Magneto-Absorption of the Direct and Indirect Transitions in GermaniumPhysical Review B, 1959
- Cпектр возбуждения экситонов в кристаллической решеткеUspekhi Fizicheskih Nauk, 1957
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Theory of Donor States in SiliconPhysical Review B, 1955