Quenching of photoluminescence from GaAs/AlGaAs single quantum well by an electric field at high temperature
- 31 December 1985
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 1 (2), 111-113
- https://doi.org/10.1016/0749-6036(85)90103-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Some effects of a longitudinal electric field on the photoluminescence of p-doped GaAs-AlxGa1−xAs quantum well heterostructuresApplied Physics Letters, 1983
- Quantum Mechanical Size Effect Modulation Light Sources– A New Field Effect Semiconductor Laser or Light Emitting DeviceJapanese Journal of Applied Physics, 1983
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982