Fabrication of regioregular poly(3-hexylthiophene) field-effect transistors by dip-coating
- 20 October 2004
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 146 (2), 127-132
- https://doi.org/10.1016/j.synthmet.2004.06.026
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulatorJournal of Applied Physics, 2004
- Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V sApplied Physics Letters, 2003
- Electrical characteristics of poly (3-hexylthiophene) thin film transistors printed and spin-coated on plastic substratesSynthetic Metals, 2003
- Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistorsJournal of Applied Physics, 2003
- Organic Thin Film Transistors for Large Area ElectronicsAdvanced Materials, 2002
- Two-dimensional charge transport in self-organized, high-mobility conjugated polymersNature, 1999
- Temperature-independent transport in high-mobility pentacene transistorsApplied Physics Letters, 1998
- High-Performance Plastic Transistors Fabricated by Printing TechniquesChemistry of Materials, 1997
- Field-effect transistors made from solution-processed organic semiconductorsSynthetic Metals, 1997
- Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobilityApplied Physics Letters, 1996