The Pb-Sn-Te phase diagram and its application to the liquid phase epitaxial growth of Pb1−xSnxTe
- 30 April 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 28 (3), 334-342
- https://doi.org/10.1016/0022-0248(75)90070-6
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTeApplied Physics Letters, 1974
- High-speed Pb1−xSnx Te photodiodesApplied Physics Letters, 1972
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new techniqueJournal of Crystal Growth, 1972
- Phase diagram, crystal growth, and band structure of InxGa1-xAsJournal of Physics and Chemistry of Solids, 1972
- Low-Carrier-Concentration Liquid Epitaxial Pb1−x Snx TeApplied Physics Letters, 1971
- The Ga-GaP-GaAs Ternary Phase DiagramJournal of the Electrochemical Society, 1970
- Growth and Characterization of Lead Telluride Epitaxial LayersJournal of the Electrochemical Society, 1970
- Discussion of “Growth and Characterization of Lead Telluride Epitaxial Layers” [John W. Wagner and Alan G. Thompson (pp. 936–940, Vol. 117, No. 7)]Journal of the Electrochemical Society, 1970
- Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-SbJournal of Physics and Chemistry of Solids, 1969