Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion
- 1 April 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (13), 1363-1365
- https://doi.org/10.1063/1.104309
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Transform-limited 1.4 ps optical pulses from a monolithic colliding-pulse mode-locked quantum well laserApplied Physics Letters, 1990
- Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasersIEEE Photonics Technology Letters, 1990
- Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disorderingApplied Physics Letters, 1989
- Ultrahigh-speed 1.55 µm λ/4-shifted DFB PIQ-BH lasers with bandwidth of 17 GHzElectronics Letters, 1989
- Disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO2Applied Physics Letters, 1989
- Reduced optical waveguide losses of a partially disordered GaAs/AlGaAs single quantum well laser structure for photonic integrated circuitsApplied Physics Letters, 1988
- Room-temperature exciton transitions in partially intermixed GaAs/AlGaAs superlatticesApplied Physics Letters, 1988
- Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in AlxGa1−x As-GaAs quantum-well heterostructuresJournal of Applied Physics, 1987
- InGaAsP buried heterostructure laser with 22 GHz bandwidth and high modulation efficiencyElectronics Letters, 1987
- Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structuresJournal of the Optical Society of America B, 1985