Carrier compensation at interfaces formed by molecular beam epitaxy
- 1 September 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (9), 6208-6213
- https://doi.org/10.1063/1.331534
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interfaceApplied Physics Letters, 1981
- Optical and Electrical Characterization of Chemical Defects in GaAs Layers Grown by MBEJournal of the Electrochemical Society, 1981
- Removal of the high-resistivity layer at the n on n+ liquid phase epitaxial GaAs layer-substrate interface by controlled i n s i t u etch-backJournal of Applied Physics, 1980
- Fabrication and numerical simulation of the permeable base transistorIEEE Transactions on Electron Devices, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Improved molecular-beam epitaxial GaAs power FET’sJournal of Applied Physics, 1980
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Interface and doping profile characteristics with molecular-beam epitaxy of GaAs: GaAs voltage varactorJournal of Applied Physics, 1974
- Ohmic Contacts to Solution-Grown Gallium ArsenideJournal of Applied Physics, 1969