Theory of nonlinear distortion produced in a semiconductor diode

Abstract

The extensive literature on the nonlinear behavior of semiconductor devices is reviewed. Over and above what is offered in the literature, the general theory of nonlinear distortion is presented in a clear and easily understood manner. Formulas derive for several of the more important kinds of distortion are readily applicable to any nonlinear transfer characteristic describing frequency-independent impedances. simplified formulas for small-signal levels reveal the relationships between the nonlinear distortions of the same order. For each order, the dependence of the distortions on the operating point of the device is described by a universal fuction. The small-signal approximations are used to investigate the non-linear distortion produced in semiconductor diodes. The universal functions for the Second-, third-, and fourth-order distortions are calculated and graphically presented. Distortion reduction is briefly considered with emphasis on counterphase, modulation. This method substantially reduces the cross modulation in the input circuit of transistor without noticeable loss in amplification.