A new result in transient current experiment on a-Si:H p/i/n and n/i/n devices
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 459-462
- https://doi.org/10.1016/s0022-3093(05)80154-1
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Interpretation of transient currents in amorphous-silicon hydride p-i-n and n-i-n devicesIEEE Transactions on Electron Devices, 1989
- Transport and the electronic structure of hydrogenated amorphous siliconPhilosophical Magazine Part B, 1986
- Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experimentPhysical Review B, 1984