Effect of growth temperature on the photoluminescent spectra from Sn-doped Ga1−xAlxAs grown by molecular beam epitaxy

Abstract

We have investigated the photoluminescence properties of Sn‐doped Ga_1−xAl_xAs (x∼0.24–0.29) grown by molecular beam epitaxy as a function of growth temperature in the range 400–675 °C. The photoluminescence intensity of the broad band at 300 K and that of the edge emission bands at 5.5 K increases with increasing growth temperature. The 5.5‐K emission spectra from samples grown below 565 °C show several weak and broad emission bands well separated from the band edge, which are attributed to Sn‐related complexes. The density of these complexes decreases at growth temperatures above 565 °C resulting in drastic improvement in the optical quality of the wafers.