Femtosecond transient reflectivity measurements as a probe for process-induced defects in silicon
- 1 December 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 46 (1-4), 446-450
- https://doi.org/10.1016/0169-4332(90)90187-5
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Ultrafast recombination and trapping in amorphous siliconPhysical Review B, 1990
- Crystalline to amorphous transformation in ion-implanted silicon: a composite modelJournal of Applied Physics, 1978