Growth of highly strained InGaAs on GaAs
- 3 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (14), 1288-1290
- https://doi.org/10.1063/1.100000
Abstract
The early stages of the molecular beam epitaxial growth of InxGa1−xAs on GaAs have been studied with reflection high-energy electron diffraction. Measurement of the in-plane surface lattice constant as a function of film thickness clearly showed a pseudomorphic to incoherent transition. Changes in the diffraction streaks indicated a corresponding two- to three-dimensional growth transition. The results are compared with various models of dislocation nucleation and good support is found for heterogeneous misfit accommodation by 60° dislocations.Keywords
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