A possible explanation for the photovoltaic effect in indium tin oxide on InP solar cells
- 1 August 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (8), 4588-4591
- https://doi.org/10.1063/1.325437
Abstract
Recently, Sree Harsha and co‐workers reported a 14.4% efficient n‐indium tin oxide/p‐InP solar cell. In principle, it is difficult to visualize a high‐efficiency photovoltaic device with this particular structure because of large interfacial defects due to crystal structure and lattice mismatch. However, we propose an explanation for the operation of this solar cell based on the presence of a thin interfacial insulating layer between the indium tin oxide and the InP. The operation is similar to tunnel MIS solar cells where the metal is replaced by a degenerate wide‐band‐gap oxide (indium tin oxide) semiconductor. Our calculations show that such semiconductor‐insulator‐semiconductor solar cells can yield efficiencies as high as 26% (AM2) with InP as the base semiconductor.Keywords
This publication has 19 references indexed in Scilit:
- The operation of the semiconductor-insulator-semiconductor (SIS) solar cell: TheoryJournal of Applied Physics, 1978
- Auger analysis of the anodic oxide/InP interfaceJournal of Vacuum Science and Technology, 1977
- n-indium tin oxide/p-indium phosphide solar cellsApplied Physics Letters, 1977
- Indium—Tin—Oxide—Silicon heterojunction photovoltaic devicesIEEE Transactions on Electron Devices, 1977
- Heterojunctions in photovoltaic devicesJournal of Vacuum Science and Technology, 1977
- Amorphous semiconductorsProgress in Solid State Chemistry, 1976
- Oxide layers on III–V compound semiconductorsThin Solid Films, 1976
- Operation of ITO/Si heterojunction solar cellsApplied Physics Letters, 1976
- Efficient photovoltaic heterojunctions of indium tin oxides on siliconApplied Physics Letters, 1976
- Electrical and Optical Properties of In2O3/n-Si PhotodiodesJapanese Journal of Applied Physics, 1976