Silicon nitride has very attractive electrical, physical, and chemical properties which are of great interest for microelectronic devices. Until recently, most methods that have been reported in literature produce silicon nitride in the form of powder, needles, ribbons, or flakes. Recently, Sterling and Swann reported that continuous films of silicon nitride have been obtained. A new pyrolytic method for preparing pinhole‐free continuous silicon nitride film is described. Films have been successfully prepared in the temperature range of 750°–1100°C. Some physical and chemical properties of those films are summarized.